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P0550BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.75Ω @VGS = 10V
ID 4.5A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
VDS
500 V
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1, 2
TC = 25 °C TC = 100 °C
ID IDM
4.5 3
A 15
Avalanche Current
IAS 5
Avalanche Energy
L = 8.7mH
EAS
109 mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
89 W
36
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P0550BT Datasheet
