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P0550BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.75Ω @VGS = 10V
ID 4.5A
TO-252
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM EAS
4.5 3 15 31
Power Dissipation
TC = 25 °C TC = 100 °C
PD
52 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C.
P0550BD Datasheet
