P046BTFS - N-Channel MOSFET

This page provides the datasheet information for the P046BTFS, a member of the P0460BTF N-Channel MOSFET family.

UNIKC

Datasheet Details

Part number	P046BTFS
Manufacturer	UNIKC
File Size	387.88 KB
Description	N-Channel MOSFET
Datasheet	P046BTFS Datasheet
Additional preview pages of the P046BTFS datasheet.

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Full PDF Text Transcription

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P0460BTF / P046BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2.6Ω @VGS = 10V 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 4 1.5 IDM 16 Avalanche Current IAS 4 Avalanche Energy L = 10mH EAS 81 Power Dissipation TC = 25 °C PD 25 TC = 100 °C 10 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.

Published: Feb 9, 2017 |