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P0306BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 3.4mΩ @VGS = 10V
ID 162A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2,3 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
162 102 300
Avalanche Current
IAS 119
Avalanche Energy
L = 0.1mH
EAS
708
Power Dissipation
TC = 25 °C TC = 100 °C
PD
178 71
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 110A.
P0306BT Datasheet
