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P0270ATF / P0270ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
6.3Ω @VGS = 10V
ID 2A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM EAS
2 1 8 5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
26 10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 4.7 62.
P0270ATF Datasheet
