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IRLML6401TR - -12V P-ChanneI MOSFET

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Description

SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 D G S 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=4.5V Continuous Drain Current, VGS=4.5V Pulsed Drain Current a Power Dissipation Power Dissipation Single

Features

  • VDS (V)=-12V RDS(ON).

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Datasheet Details

Part number IRLML6401TR
Manufacturer UMW
File Size 769.45 KB
Description -12V P-ChanneI MOSFET
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UMW IRLML6401TR -12V P-ChanneI MOSFET 1.1Features VDS (V)=-12V RDS(ON)<50mΩ(VGS=-4.5V) RDS(ON)<85mΩ(VGS=-2.5V) RDS(ON)<125mΩ(VGS=-1.8V) 1.2Features Ultra low on-resistance P-Channel MOSFET Fast switching 2.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 D G S 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=4.5V Continuous Drain Current, VGS=4.5V Pulsed Drain Current a Power Dissipation Power Dissipation Single Pulse Avalanche Energy b TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDM PD EAS Value -12 ±8 -4.3 -3.4 -34 1.3 0.8 33 Units V A W mJ UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 10 www.umw-ic.
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