FDV303N - 25V N-ChanneI MOSFET

General Description

SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Electr

Key Features

VDS(V)=25V ID=0.68A RDS(ON).

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FDV303N 25v n-channei mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	FDV303N
Manufacturer	UMW
File Size	720.19 KB
Description	25V N-ChanneI MOSFET
Datasheet	FDV303N Datasheet

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UMW FDV303N 25V N-ChanneI MOSFET 1.Features VDS(V)=25V ID=0.68A RDS(ON)<28mΩ(VGS=4.5V) RDS(ON)<42mΩ(VGS=2.7V) Compact industry standard SOT-23 surface mount package. Very low level gate drive requirements allowing direct operation in 3V circuits VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model 2.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.