FDV303N
Features
VDS(V)=25V ID=0.68A RDS(ON)<28mΩ(VGS=4.5V) RDS(ON)<42mΩ(VGS=2.7V) pact industry standard SOT-23 surface mount package.
Very low level gate drive requirements allowing direct operation in 3V circuits VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6k V Human Body Model
2.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
3.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current
- Continuous
- Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient
Symbol VDSS VGSS ID PD
TJ, TSTG ESD
RθJA
Value 25 8 0.68 2 0.35
-55 to 150
Units V
A A W °C
6 k V
°C/W
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
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.umw-ic.
UMW FDV303N
25V N-Channe I MOSFET
4.Electri...
