ESD5451N
Features
- - Reverse stand-off voltage: ±5V Max
- - Transient protection for each line according to
IEC61000-4-2 (ESD): ±30k V (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs)
- - Capacitance: CJ = 17.5p F typ.
- - Low leakage current: IR < 1n A typ.
- - Low clamping voltage: VCL = 9V typ. @ IPP = 16A (TLP)
- - Solid-state silicon technology
Applications
- - Cellular handsets
- - Tablets
- - Laptops
- - Other portable devices
- Network munication devices
Absolute maximum ratings
Parameter Peak pulse power (tp = 8/20μs) Peak pulse current (tp = 8/20μs) ESD according to IEC61000-4-2 air discharge ESD according to IEC61000-4-2 contact discharge Operation junction temperature Lead temperature Storage temperature
.umw-ic.
Symbol Ppk IPP
VESD
TJ TL TSTG
Rating 80 8 ±30 ±30 125 260
-55~150
Unit W A k V o C o C o C
友台半导体有限公司
UMW R
Electrical characteristics (TA=25o C, unless otherwise noted)
Parameter
Symbol
Condition
Min. Typ....
