Datasheet Details
| Part number | 2SC3265 |
|---|---|
| Manufacturer | UMW |
| File Size | 288.23 KB |
| Description | SOT-23 Plastic-Encapsulate Transistors |
| Datasheet |
 2SC3265 Datasheet
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| Part number | 2SC3265 |
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| Manufacturer | UMW |
| File Size | 288.23 KB |
| Description | SOT-23 Plastic-Encapsulate Transistors |
| Datasheet |
2SC3265 Datasheet
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SOT-23 1 B BASE 2 E EMITTER 3 C COLLECTOR 1 3.Absolute Maximum Ratings TA= 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors Complementary to KTA1298 3 2 Symbol VCBO VCEO VEBO IC PC TJ TSTG Value 35 30 5 800 200 150 -55 to 150 Units V V V mA mW °C °C UTD Semiconductor Co.,Limited www.umw-ic.com Jun.2025 1 of 6 www.umw-ic.com UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors 4.Electrical Characteristics TA= 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage base-emitter voltage Transition frequency Collector output capacitance Symbol Conditions V(BR)CBO IC=100μA, IE=0 V(BR)CEO IC=10mA, IB=0 V(BR)EBO IE=100μA, IC=0 ICBO VCB=30V, IE=0 IEBO VEB=5V, IC=0 hFE VCE=1V, IC=100mA VCE(sat) IC=500mA, IB=20mA VBE VCE=1V, IC=10mA fT VCB=5V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1MHz Min Typ Max Units 35 V 30 V 5 V 0.1 μA 0.1 μA 100 320 0.5 V 0.5 0.8 V 120 MHz 13 pf 5.Classification of hFE Rank Range Marking O 100-200 EO Y 160-320 EY 2 of 6 UTD Semiconductor Co.,Limited Jun.2025 www.umw-ic.com 6.Typical Characterisitics UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors hFE, DC Current Gain IC, Collector Current (mA) VCEsat, Collector-emitter Saturation Voltage (V) VCE, Collector-emitter Voltage (V) Figure 1: IC-VCE IC, Collector Current (mA) Figure 2: hFE —— IC PC, Collector Power Dissipation (mW) IC, Collector Current (mA) IC, Collector Curremt (mA) Figure 3: VCEsat —— IC VBE, Base-Emitter Voltage (V) Figure 4: IC —— VBE TA, Ambient Temperature (°C) Figur
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3265 | Silicon NPN TRANSISTOR | Toshiba Semiconductor |
| EVVOSEMI | 2SC3265 | NPN Transistors | EVVOSEMI |
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2SC3265 | NPN General Purpose Amplifier | MCC |
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2SC3265 | NPN Transistors | Kexin |
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2SC3265-O | NPN Amplifier | MCC |
| Part Number | Description |
|---|