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UM6167 - 16K x 1 High Speed CMOS SRAM

General Description

The UMC UM6167 is a 16,384 bit static random access memory organized as 16,384 words by 1 bit and operates from a single 5 volt supply.

performance twin tub CMOS process.

Inputs and threestate outputs are TTL compatible.

Key Features

  • High-speed - 35/45/55/70 ns.
  • Low power dissipation 150mW (Typ. ) operating 100p. W (Typ. ) stand by.
  • Single 5V pow~r supply.
  • Fully static operation.
  • All inputs and outputs directly TTL compatible.
  • Th ree state outputs.
  • Data retention supply voltage: 2.0 - 5.5V General.

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Datasheet Details

Part number UM6167
Manufacturer UMC
File Size 189.17 KB
Description 16K x 1 High Speed CMOS SRAM
Datasheet download datasheet UM6167 Datasheet

Other Datasheets by UMC

Part Number Description
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UM6114 1K x 4 CMOS SRAM
UM6116 (UM6114) 1k x 4 CMOS SRAM
UM6116-2 2K x 8 High Speed CMOS SRAM
UM6116-25 (UM6116-35 / UM6116-45) 2k x 8 High Speed CMOS SRAM
UM6116-3 2K x 8 High Speed CMOS SRAM
UM6116-4 2K x 8 High Speed CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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eUMC ======== UM6167 16K x l' High Speed CMOS SRA,fd Features' • High-speed - 35/45/55/70 ns • Low power dissipation 150mW (Typ.) operating 100p.W (Typ.) stand by • Single 5V pow~r supply • Fully static operation • All inputs and outputs directly TTL compatible • Th ree state outputs • Data retention supply voltage: 2.0 - 5.5V General Description The UMC UM6167 is a 16,384 bit static random access memory organized as 16,384 words by 1 bit and operates from a single 5 volt supply. It is built with UMC's high performance twin tub CMOS process. Inputs and threestate outputs are TTL compatible. The UM6167 is moulded in a standard 20-pin, 300 mil DIP.