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QN3109 - N-Channel 30V Fast Switching MOSFET

Download the QN3109 datasheet PDF. This datasheet also covers the QN3109M6N variant, as both devices belong to the same n-channel 30v fast switching mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (QN3109M6N-UBIQ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QN3109
Manufacturer UBIQ
File Size 258.82 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QN3109 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
QN3102M6N N-Channel 30V Fast Switching MOSFET uPI Semiconductor
QN3107M6N N-Channel 30V Fast Switching MOSFET uPI Semiconductor

Other Datasheets by UBIQ

Part Number Description
QN3109M6N N-Channel 30V Fast Switching MOSFET
QN3103M6N N-Channel 30V Fast Switching MOSFET
QN3107M6N N-Channel 30V Fast Switching MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.