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QM3809M6 - Dual N-Ch Fast Switching MOSFETs

Description

The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Dual N-Ch Fast Switching MOSFETs Product Summery CH Die1 Die2 BVDSS 30V 30V RDSON 9mΩ 5.5mΩ ID 57A 72A.

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Datasheet Details

Part number QM3809M6
Manufacturer UBIQ
File Size 379.50 KB
Description Dual N-Ch Fast Switching MOSFETs
Datasheet download datasheet QM3809M6 Datasheet

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Full PDF Text Transcription

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QM3809M6 General Description The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3809M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Dual N-Ch Fast Switching MOSFETs Product Summery CH Die1 Die2 BVDSS 30V 30V RDSON 9mΩ 5.
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