Datasheet4U Logo Datasheet4U.com

QM0016S - N-Ch 100V Fast Switching MOSFETs

Description

The QM0016S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 100V RDSON 47mΩ ID 3.6A.

📥 Download Datasheet

Datasheet Details

Part number QM0016S
Manufacturer UBIQ
File Size 353.30 KB
Description N-Ch 100V Fast Switching MOSFETs
Datasheet download datasheet QM0016S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
QM0020AP N-Channel 100V MOSFET VBsemi
QM0020P N-Channel 100V MOSFET VBsemi
QM06N65F N-Channel 650V Power MOSFET VBsemi
QM07N60F N-Channel 650V Power MOSFET VBsemi
QM09N65F N-Channel 650V Power MOSFET VBsemi

Other Datasheets by UBIQ

Part Number Description
QM0016D N-Ch 100V Fast Switching MOSFETs
QM0016F N-Ch 100V Fast Switching MOSFETs
QM0016P N-Ch 100V Fast Switching MOSFETs
QM0018AD N-Ch 100V Fast Switching MOSFETs
QM0004D N-Ch 100V Fast Switching MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
QM0016S N-Ch 100V Fast Switching MOSFETs General Description The QM0016S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM0016S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 100V RDSON 47mΩ ID 3.
Published: |