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PTI3134-9L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetaVCeramic Package .093=.013 :2.29L.25> 7 3goF :2.29i.25> Absolute Maximum Ratings at 25°C i . mt.010 .004z.001 1 (1.52) INCHES.

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= ----- an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetaVCeramic Package .093=.013 :2.29L.25> 7 3goF :2.29i.25> Absolute Maximum Ratings at 25°C i .mt.010 .004z.001 1 (1.52) INCHES
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