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PI-F2731-75L - Radar Pulsed Power Transistor/ 75W/ 300ms Pulse/ 10% Duty 2.7 - 3.1 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package Absolute Maximum Ratings at 25°C Parameter Symbol Rating 65 3.0 7.0 Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation Junction Temperature StorageTemperature VCES VES0 ‘c PTO.

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an == AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package Absolute Maximum Ratings at 25°C Parameter Symbol Rating 65 3.0 7.0 Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation Junction Temperature StorageTemperature VCES VES0 ‘c PTOi TJ TSW V V A w / “C .167=.010 190 200 I UNLYSS O-HfRW:S: KGTZD, Y--RANKS ARE .06O=.CO3 u.s2:.05: iNCHES :MILL,METERS 1’ =.
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