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PHA3135-130M - RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz

Datasheet Summary

Features

  • q q q q q NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange Absolute Maximum Ratings at 25°C1 Parameter Suppy Voltage Input Power Output Power @ 3.3 GHz Thermal Resistance / Per Transistor Power Dissipation Operating Case Temp. Storage Temperature Absolute Maximum 40V 26.5V 200A 0.24A 400W -30 to 1200°C -40 to +125°C Unless Otherwise Noted, Tolerances Are: Inches ±.005˝ (Millimeters ±13mm) 1. Oper.

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Datasheet Details

Part number PHA3135-130M
Manufacturer Tyco Electronics
File Size 122.47 KB
Description RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz
Datasheet download datasheet PHA3135-130M Datasheet
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Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features q q q q q NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange Absolute Maximum Ratings at 25°C1 Parameter Suppy Voltage Input Power Output Power @ 3.3 GHz Thermal Resistance / Per Transistor Power Dissipation Operating Case Temp. Storage Temperature Absolute Maximum 40V 26.5V 200A 0.24A 400W -30 to 1200°C -40 to +125°C Unless Otherwise Noted, Tolerances Are: Inches ±.005˝ (Millimeters ±13mm) 1. Operation of this device outside of these limits may cause permanent damage.
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