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Wireless Bipolar Power Transistor, 1450 - 1550 MHz
Features
Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Marching Diffused Emitter Ballasting ‘f
60W
PHI516160
.22st.010 C5.72t.25)
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Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage CollectorCurrent Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance
Vcm VCES VEm 1, P, T, T srt 8JC (
65 65 3.0 10 116 200 -55 to +150
1.5
V V V ] A W “C “C
“CIW
UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES t.
PH1516-60 Datasheet
