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MA4SW210B-1 - Monolithic Pin Diode Switches

Download the MA4SW210B-1 datasheet PDF. This datasheet also covers the MA4SW310B-1 variant, as both devices belong to the same monolithic pin diode switches family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM's HMIC TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.

Key Features

  • Chip Layout MA4SW210B-1 Broad Bandwith Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4SW310B-1_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4SW201 Surface Mount Monolithic PIN Diode Switches
MA4SW101 Surface Mount Monolithic PIN Diode Switches
MA4SW301 Surface Mount Monolithic PIN Diode Switches
MA4SW310B-1 Monolithic Pin Diode Switches
MA4SW410 SP4T Monolithic PIN Diode Switch
MA4SW410B-1 SP4T PIN Diode
MA4SW424B-1 Monolithic SP4T PIN Diode Switch
MA4SW510 SP5T PIN Diode Reflective Switch
MA4SW510B-1 SP5T PIN Diode Switch
MA4SW610B-1 SP6T PIN Diode Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Monolithic Pin Diode Switches with Integrated Bias Network V3.00 MA4SW210B-1, MA4SW310B-1 Features • • • • • Chip Layout MA4SW210B-1 Broad Bandwith Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM's HMIC TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass.