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MA4E2532M-1113 - SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

Download the MA4E2532M-1113 datasheet PDF. This datasheet also covers the MA4E2532L-1113 variant, as both devices belong to the same surmount low & medium barrier silicon schottky diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 A B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4E2532L-1113_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4E2532L-1113 SURMOUNT Low & Medium Barrier Silicon Schottky Diodes
MA4E2501-1290 SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
MA4E2502 Medium and High Barrier Silicon Schottky Diodes
MA4E2508 SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes
MA4E2513-1289 Silicon Schottky Diodes
MA4E2514 SURMOUNT Low and Medium Barrier Silicon Schottky Diodes
MA4E2544L-1282 SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series
MA4E2037 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2039 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2040 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 A B Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.