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MA4E1319-2 - (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes

Download the MA4E1319-2 datasheet PDF. This datasheet also covers the MA4E1317 variant, as both devices belong to the same (ma4e1317 - ma4e1319) gaas flip chip schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes.

Key Features

  • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4E1317_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MA4E1319-2 GaAs Flip Chip Schottky Barrier Diodes MA-COM

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4E1319-1 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1317 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1318 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1338 Silicon Medium Barrier Schottky Diodes
MA4E1340 Silicon Medium Barrier Schottky Diodes
MA4E2037 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2039 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2040 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2062 Silicon Schottky Diode Ring Quads
MA4E2072 Surface Mount Schottky Crossover Quads

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.