M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode.
These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
Key Features
MA4AGFCP910
Rev 2.0
Top View Shown Is With Diode Junction Up
Cathode
Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection.
Full PDF Text Transcription for MA4AGFCP910 (Reference)
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AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz Features • • • • • • • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra...
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Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection Description M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics. www.DataSheet4U.com They are fully passivated with silicon nitride an
MA4AGFCP910 Datasheet
