TF3420 - N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Tuofeng Semiconductor

Datasheet Details

Part number	TF3420
Manufacturer	Tuofeng Semiconductor
File Size	375.63 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	TF3420 Datasheet
Additional preview pages of the TF3420 datasheet.

Product details

Description

The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum 20 ±12 6 25 1.4 -55 to 150.

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Published: Aug 28, 2016 |