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S9014LT1 - NPN Transistor

Features

  • High total power dissipation. (pc=0.2w) Complementary to S9015LT1.

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Datasheet Details

Part number S9014LT1
Manufacturer Tuofeng Semiconductor
File Size 154.26 KB
Description NPN Transistor
Datasheet download datasheet S9014LT1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature ELECTRICAL CHARACTERISTICS Tamb=25 Value 50 45 5 0.1 0.2 -55-150 unless otherwise specified Parameter Symbol Test conditions MIN TYP Units V V V A W MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.
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