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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S9014LT1 TRANSISTOR NPN
FEATURES
High total power dissipation.(pc=0.2w) Complementary to S9015LT1
MARKING: L6 J6
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25
Value 50 45 5 0.1 0.2
-55-150
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
Units V V V A W
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.