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MMBTH10LT1 - NPN Transistor

Key Features

  • SOT-23 1. BASE 2.

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Datasheet Details

Part number MMBTH10LT1
Manufacturer Tuofeng Semiconductor
File Size 51.26 KB
Description NPN Transistor
Datasheet download datasheet MMBTH10LT1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 2. 4 1. 3 Unit: mm 0.