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4812 - Dual N-Channel MOSFET

Description

The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

4812 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 8.0A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8.0 30 2 1.44 -55 to 150 Thermal Cha.

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Datasheet Details

Part number 4812
Manufacturer Tuofeng Semiconductor
File Size 173.14 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 4812 Datasheet

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4812 4812 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. 4812 is Pb-free (meets ROHS & Sony 259 specifications). 4812 is a Green Product ordering option. 4812 is electrically identical. Features VDS (V) = 30V ID = 8.0A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.
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