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4803 - Dual P-Channel MOSFET

Description

The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product 4803 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -20 2 1.4 -55 to 150.

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Datasheet Details

Part number 4803
Manufacturer Tuofeng Semiconductor
File Size 165.16 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet 4803 Datasheet

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product 4803 is Pb-free (meets ROHS & Sony 259 specifications). AO4803 is a Green Product ordering option. 4803 is electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.
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