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TSU2N60MZ - N-Channel MOSFET

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Truesemi

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TSU2N60MZ N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSU2N60MZ

Datasheet Details

Part number	TSU2N60MZ
Manufacturer	Truesemi
File Size	227.53 KB
Description	N-Channel MOSFET
Datasheet	TSU2N60MZ Datasheet
Additional preview pages of the TSU2N60MZ datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast switching.
100% avalanche tested.
ESD improved capability.
Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curren.

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Published: Apr 13, 2017 |