TSP730M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSP730M
Manufacturer	Truesemi
File Size	264.78 KB
Description	N-Channel MOSFET
Datasheet	TSP730M Datasheet
Additional preview pages of the TSP730M datasheet.

This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology.

6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V.
Low gate charge ( typical 18nC).
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pul.

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Published: Apr 12, 2017 |