TSP2N70M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSP2N70M
Manufacturer	Truesemi
File Size	572.32 KB
Description	N-Channel MOSFET
Datasheet	TSP2N70M Datasheet
Additional preview pages of the TSP2N70M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

2.0A,700V,Max. RDS(on)=7.00 Ω @ VGS =10V.
Low gate charge(typical 9nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.

📁 Similar Datasheet

TSP2-QF2012A3 - CHIP LED (TAITRON)
TSP2-XF2012A3 - CHIP LED (TAITRON)
TSP20U60S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP220A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP220B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP220C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP220SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP220SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)

Other Datasheets by Truesemi

Published: Apr 13, 2017 |