TSP12N60M - 600V N-Channel MOSFET

Product Overview

Truesemi

Part number	TSP12N60M
Manufacturer	Truesemi
File Size	346.97 KB
Description	600V N-Channel MOSFET
Datasheet	TSP12N60M Datasheet
Additional preview pages of the TSP12N60M datasheet.

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1).

📁 Similar Datasheet

TSP120A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP120B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP120C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP120SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP120SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP120SC - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP12U120S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP1-WF1608H6-CRSM - 0603 Package 0.6mm Height Flat Top LED (TAITRON)

Other Datasheets by Truesemi

Published: Nov 21, 2015 |