Datasheet Details
| Part number | TSF80R600S1 |
|---|---|
| Manufacturer | Truesemi |
| File Size | 535.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSF80R600S1 Datasheet
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General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Key Features
- 850V @TJ = 150 ℃.
- Typ. RDS(on) = 0.55Ω.
- Ultra Low gate charge (typ. Qg = 35nC).
- 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
- Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av.