TSF2N60MZ - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSF2N60MZ
Manufacturer	Truesemi
File Size	345.91 KB
Description	N-Channel MOSFET
Datasheet	TSF2N60MZ Datasheet
Additional preview pages of the TSF2N60MZ datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast switching.
100% avalanche tested.
ESD improved capability.
Improved dv/dt capability GDS TO-220 GD S TO-220F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

📁 Similar Datasheet

TSF204D00-S1 - Saw Filters (Token)
TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H120C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H150C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20L100C - Schottky Barrier Rectifier (INCHANGE)
TSF20L120C - Trench Schottky Rectifier (Taiwan Semiconductor)

Other Datasheets by Truesemi

Published: Apr 13, 2017 |