Datasheet Details
| Part number | TSD2N60MZ |
|---|---|
| Manufacturer | Truesemi |
| File Size | 227.53 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSD2N60MZ Datasheet
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General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
- Low gate charge ( typical 9nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- ESD improved capability.
- Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curren.