TQM7M5013 - Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module

Product Overview

TriQuint Semiconductor

Datasheet Details

Part number	TQM7M5013
Manufacturer	TriQuint Semiconductor
File Size	225.57 KB
Description	Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
Datasheet	TQM7M5013 Datasheet
Additional preview pages of the TQM7M5013 datasheet.

Product details

Description

The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions.

Features

Digital Control Interface.
Low Current At Backed-Off Power Levels.
Input Power Controlled.
GMSK & 8PSK.
LB Has 4 modes.
HP, MP, LP, & ULP.
HB Has 3 modes.
HP, LP, & ULP.
HBT/PHEMT High Efficiency Technology.
High.
Power Linearity.
Standard LB & HB Paths.
50 Ω Input & Output Impedance.
Halogen-Free.
11 Pin Package General.

📁 Similar Datasheet

TQM019NH04CR - Power Transistor (Taiwan Semiconductor)
TQM025NH04CR - Power Transistor (Taiwan Semiconductor)
TQM032NH04LCR - Power Transistor (Taiwan Semiconductor)
TQM043NH04LCR - Power Transistor (Taiwan Semiconductor)
TQM056NH04CR - Power Transistor (Taiwan Semiconductor)
TQM056NH04LCR - Power Transistor (Taiwan Semiconductor)
TQM070NH04CR - Power Transistor (Taiwan Semiconductor)
TQM070NH04LCR - Power Transistor (Taiwan Semiconductor)

Other Datasheets by TriQuint Semiconductor

TQM7M5012 - 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
TQM7M5012H - Quad-Band GSM / GPRS / EDGE-Polar Power Amplifier Module
TQM7M5002 - Quad-Band GSM/EDGE Polar Power Amplifier Module
TQM7M5003 - Quad-Band GSM/EDGE Polar Power Amplifier Module
TQM7M5004 - GSM/EDGE Multi-mode Power Amplifier Module
TQM7M5005 - GSM/EDGE Multi-mode Power Amplifier Module

Published: Jul 2, 2012 |