Datasheet Details
| Part number | TGA2573 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 568.33 KB |
| Description | 2-18 GHz 10 Watt GaN Amplifier |
| Datasheet |
 TGA2573 Datasheet
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General Description
TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.
Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.
Key Features
- Frequency Range: 2.
- 18 GHz.
- Psat: 40.0 dBm at Vd=30 V.
- PAE: 25% typical.
- Small Signal Gain: 9 dB.
- Return Loss: 15 dB.
- Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical.
- Technology: 0.25 µm GaN on SiC.
- Dimensions: 2.55 x 5.54 x 0.1 mm General.