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TPD3215M - GaN Power Hybrid HEMT Half-Bridge Module

Key Features

  • High frequency operation.
  • Free-wheeling diode not required.

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Datasheet Details

Part number TPD3215M
Manufacturer Transphorm
File Size 1.21 MB
Description GaN Power Hybrid HEMT Half-Bridge Module
Datasheet download datasheet TPD3215M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD3215M—Discontinued PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) (m) 30 Features  High frequency operation  Free-wheeling diode not required Applications  Compact DC-DC converters  AC motor drives  Battery chargers  Switch mode power supplies GaN Power Hybrid HEMT Half-Bridge Module SL GL SH GH N U P Absolute Maximum Ratings (TC=25 °C unless otherwise stated) Symbol Parameter ID25°C Continuous Drain Current @TC=25 °C (per switch) a ID100°C Continuous Drain Current @TC=100 °C (per switch) IDM Pulsed Drain Current (pulse width: 5s) VDSS VDST Drain to Source Voltage Transient Drain to Source Voltage b VGSS PD25°C Gate to Source Voltage Maximum Power Dissipation (per switch) Maximum Power Dissipation (whole module) TJ Junction Operating Temperature TS TCsold