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TC2281 - Low Noise and High Dynamic Range Packaged GaAs FETs

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Transcom

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TC2281 Low Noise and High Dynamic Range Packaged GaAs FETs by Transcom - Datasheet Preview — Datasheet preview – TC2281

Datasheet Details

Part number	TC2281
Manufacturer	Transcom
File Size	343.70 KB
Description	Low Noise and High Dynamic Range Packaged GaAs FETs
Datasheet	TC2281 Datasheet
Additional preview pages of the TC2281 datasheet.

Product details

Description

The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip.

Features

! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO.

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Published: Jul 4, 2013 |