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XPH3R206NC - Silicon N-Channel MOSFET

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Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH3R206NC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2020-10-21 Rev.1.0 XPH3R206NC 4. Absolute Maximu.

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Datasheet Details

Part number XPH3R206NC
Manufacturer Toshiba
File Size 554.67 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS�-H) XPH3R206NC 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH3R206NC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2020-10-21 Rev.1.0 XPH3R206NC 4.
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