TPN6R303NC - MOSFET

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Toshiba

Part number	TPN6R303NC
Manufacturer	Toshiba
File Size	232.97 KB
Description	MOSFET
Datasheet	TPN6R303NC Datasheet
Additional preview pages of the TPN6R303NC datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pul.

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Published: Aug 29, 2014 |