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TPN22006NH - MOSFET

Key Features

  • (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 1 2012-08 2014-01-07 Rev.2.0 TPN22006NH 4. Absolute Maximum Ratings (N.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPN22006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN22006NH 1. Applications • • • Switching Voltage Regulators Motor Drivers DC-DC Converters 2. Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 1 2012-08 2014-01-07 Rev.2.0 TPN22006NH 4.