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TPN1R603PL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ. ) (3) Small output charge: Qoss = 23 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1R603PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-08-25 Rev.1.0.

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Datasheet Details

Part number TPN1R603PL
Manufacturer Toshiba
File Size 526.98 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPN1R603PL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1R603PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-08-25 Rev.1.0 TPN1R603PL 4.