TPH8R80ANH - Field Effect Transistor

Product Overview

Toshiba

Part number	TPH8R80ANH
Manufacturer	Toshiba
File Size	261.37 KB
Description	Field Effect Transistor
Datasheet	TPH8R80ANH Datasheet
Additional preview pages of the TPH8R80ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-05-10 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH8R80ANH 4. Absolute Maximum Ratings (Note) (Ta = 2.

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Published: Nov 11, 2013 |