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TPD7211F - Power MOSFET Gate Driver

General Description

Pin No.

Input pin for high-side output (OUT1) control.

The IN1 pin has an internal pull-down resistor.

Key Features

  • z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD 6 N. C Marking SON8-P-0303-0.65 Weight: 0.017g (typ. ) Part No. (or abbreviation code) 7211F Lot No. GND 4 (TOP VIEW) 5 OUT2.
  • on the lower left of the marking indicates Pin 1.
  • Weekly code: (Three digits) Week of manufacture (01 for fi.

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Datasheet Details

Part number TPD7211F
Manufacturer Toshiba
File Size 247.68 KB
Description Power MOSFET Gate Driver
Datasheet download datasheet TPD7211F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD 6 N.C Marking SON8-P-0303-0.65 Weight: 0.017g (typ.) Part No. (or abbreviation code) 7211F Lot No.