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TPD7106F - 1-channel High-Side N channel Power MOSFET Gate Driver

General Description

TPD7106F is a 1channel high-side N channel power MOSFET gate driver.

This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications.

2.

Junction Boxes for Automotive.

Power distribution modules fo

Key Features

  • AEC-Q100 qualified.
  • Built in the charge pump circuit (Charge pump capacitor is external).
  • Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible.
  • Built in the protection for reverse connection of power supply.
  • Built in the diagnosis output for under voltage of Charge pump circuit.
  • SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. © 2019 1 Tosh.

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Datasheet Details

Part number TPD7106F
Manufacturer Toshiba
File Size 622.12 KB
Description 1-channel High-Side N channel Power MOSFET Gate Driver
Datasheet download datasheet TPD7106F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit TPD7106F 1 channel High-Side N channel Power MOSFET Gate Driver 1. Description TPD7106F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. TPD7106F TPD7106F 2. Applications ● Junction Boxes for Automotive. ● Power distribution modules for Automotive. ● Semiconductor relays. SSOP16-P-225-0.65B 3. Features ● AEC-Q100 qualified. ● Built in the charge pump circuit (Charge pump capacitor is external). ● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible. ● Built in the protection for reverse connection of power supply.