TPCC8076 - Silicon N-Channel MOSFET

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Toshiba

Part number	TPCC8076
Manufacturer	Toshiba
File Size	263.70 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCC8076 Datasheet
Additional preview pages of the TPCC8076 datasheet.

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 33 V Ga.

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Published: Nov 11, 2013 |