TPCC8074 - Field Effect Transistor

Product Overview

Toshiba

Part number	TPCC8074
Manufacturer	Toshiba
File Size	257.03 KB
Description	Field Effect Transistor
Datasheet	TPCC8074 Datasheet
Additional preview pages of the TPCC8074 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Published: Nov 11, 2013 |