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TK5P60W5 - N-Channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trr = 65 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.84 Ω (typ. ) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5P60W5 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-s.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK5P60W5 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features (1) Fast reverse recovery time: trr = 65 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.84 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.23 mA) 3. Packaging and Internal Circuit TK5P60W5 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 4.