TK22A10N1 - Silicon N-Channel MOSFET

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Toshiba

Part number	TK22A10N1
Manufacturer	Toshiba
File Size	236.84 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK22A10N1 Datasheet
Additional preview pages of the TK22A10N1 datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK22A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

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Published: Nov 26, 2013 |