TIM1414-10LA - Microwave Power GaAs FET

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Toshiba

Part number	TIM1414-10LA
Manufacturer	Toshiba
File Size	583.21 KB
Description	Microwave Power GaAs FET
Datasheet	TIM1414-10LA Datasheet
Additional preview pages of the TIM1414-10LA datasheet.

Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level.
High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz.
High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz.
Broadband internally matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efﬁciency 3rd Order Intermodulatio.

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Published: Jul 30, 2006 |