High speed operation : tpd = 3.7ns (typ. ) at VCC = 5V, 15pF.
Low power dissipation : ICC = 2μA (max) at Ta = 25°C.
5.5-V tolerant inputs.
Balanced propagation delays : tpLH ≈ tpHL.
Wide operating voltage range : VCC = 2 to 5.5V
TC7SH00F TC7SH00FU
(SMV)
Marking
Product name
H1
(USV)
Weight SSOP5-P-0.95 SSOP5-P-0.65A
: 0.016 g (typ. ) : 0.006 g (typ. )
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Supply voltage DC input voltage DC outpu.
Full PDF Text Transcription for TC7SH00FU (Reference)
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TC7SH00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00F, TC7SH00FU 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns (typ.) at VCC =...
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AND Gate Features • High speed operation : tpd = 3.7ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • 5.5-V tolerant inputs • Balanced propagation delays : tpLH ≈ tpHL • Wide operating voltage range : VCC = 2 to 5.5V TC7SH00F TC7SH00FU (SMV) Marking Product name H1 (USV) Weight SSOP5-P-0.95 SSOP5-P-0.65A : 0.016 g (typ.) : 0.006 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10s) Symbol VCC
TC7SH00FU Datasheet
